| PART |
Description |
Maker |
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| STF5N80K5 |
N-channel 800 V, 1.50(ohm) typ., 4 A MDmesh K5 Power MOSFET in a TO-220FP package
|
STMicroelectronics
|
| STB13N80K5 |
N-channel 800 V, 0.37 Ohm typ., 12 A MDmesh K5 Power MOSFET in D2PAK package
|
ST Microelectronics
|
| STD5N80K5 |
N-channel 800 V, 1.50 (ohm) typ., 4 A MDmesh K5 Power MOSFET in a DPAK package
|
STMicroelectronics
|
| STL40C30H3LL |
N-channel 30 V, 0.019 Ohm typ., 10 A, P-channel 30 V, 0.024 Ohm typ., 8 A STripFET(TM) V Power MOSFET in a PowerFLAT(TM) 5x6 d. i. package
|
ST Microelectronics
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| STI6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in I2PAK package
|
ST Microelectronics
|
| STS8C6H3LL |
N-channel 30 V, 0.019 Ohm typ., 8 A, P-channel 30 V, 0.024 Ohm typ., 6 A STripFET(TM) Power MOSFET in a SO-8 package
|
ST Microelectronics
|
| APT17F80S APT17F80B |
Power FREDFET; Package: D3 [S]; ID (A): 18; RDS(on) (Ohms): 0.58; BVDSS (V): 800; 18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
18 A, 800 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
MICROSEMI POWER PRODUCTS GROUP
|
| SXL-208-BLK SXL-208-TR1 SXL-208-TR2 |
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 100/TRAY.
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 500. Reel size 7
800-970 MHz, 50 Ohm power MMIC amplifier. High 3rd order intercept: 46dBm typ. at 900 MHz. Devices per reel 1000. Reel size 13
|
Stanford Microdevices
|
| STU6N60M2 STF6N60M2 STP6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
|
ST Microelectronics
|
| SML8075AN-QR-D SML8075HN SML8075HN-JQR SML8075HNR1 |
11.5 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
11.5 A, 800 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-258AA TO-258, 3 PIN
|
TT electronics Semelab, Ltd.
|
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